NEO Semiconductor is developing a new type of DRAM memory called 3D X-DRAM, aiming to offer larger and faster memory modules.

The technology utilizes a vertically stacked architecture, similar to 3D NAND, to achieve greater memory density. This design allows for multiple layers of memory cells, potentially leading to significant capacity increases.

The company projects that its most advanced modules could reach densities of up to 512GB, a substantial increase compared to current consumer-grade DRAM.

NEO’s approach includes two primary designs: a simpler 1T0C architecture currently in testing, and a more advanced 1T1C version planned for release in 2026. The 1T1C variant uses IGZO transistors and cylindrical high-k dielectric capacitors, promising better data retention and support for more memory layers.

The 1T1C design is projected to support stacking of up to 128 layers, with potential for exceeding 512 layers through further refinements.

A 3T0C design, incorporating dual IGZO layers, is also in development, specifically tailored for in-memory computing and artificial intelligence (AI) applications.

While NEO claims the new technology will eliminate the need for TSV (Through-Silicon Via) and enable up to 32K-bit bus widths, the feasibility of scaling this level of performance in real-world systems presents a challenge.

Despite advancements in DRAM technology, the cost-per-GB has not significantly decreased over the past decade, with price drops being modest.

Industry analysts suggest that while 3D X-DRAM may offer significant capacity and speed, it is unlikely these 512GB modules will be readily available to the average consumer in the near future.

The initial target market for this advanced memory technology is expected to be AI servers and enterprise systems, rather than everyday consumer devices such as desktops or laptops.